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St introduces new hyperjunction MOSFETs and the first 1500V TO-220FP wide-creepage pitch package power transistor

2024/8/16

STMicroelectronics (ST), the world's leading semiconductor supplier across multiple electronic applications; (NYSE: STM) introduced a line of power transistors in TO-220FullPAK(TO-220FP) wide-creepage pitch packages, including the first 1500V superMOS in an arc-proof package


  电视和PC等设备常用的开放式电源表面很容易聚集尘土和粉尘,导致功率晶体管引脚之间产生高压电弧放电现象,TO-220FP宽爬电间距封装是这类应用功率晶体管的理想选择。在使用2.54mm引脚间隔的常规封装时,需要铸封、引线成形、套管或密封等特殊工艺,这款新封装将引脚间距扩至4.25mm,让电源厂商能够满足现行安全标准,将现场电源故障率降至最低,而无需使用这些附加的防电弧工艺,从而简化了制造过程,提高了生产效率。The open power supply surface commonly used in devices such as TVS and PCS is prone TO dust and dust accumulation, resulting in high voltage arc discharge between the power transistor pins, and the TO-220FP wide creepage pitch package is ideal for power transistors in such applications. Where conventional packages with 2.54mm pin spacing require special processes such as casting, lead forming, casing or sealing, this new package extends the pin spacing to 4.25mm, allowing power vendors to meet current safety standards and minimize field power failures without the need for these additional arcing processes, simplifying the manufacturing process. Improved production efficiency.

While providing excellent arc protection, the TO-220FP creepage also retains the excellent electrical characteristics of the popular TO-220FP in the market. In addition, similar exterior dimensions simplify installation issues and conform to existing installation processes.

The TO-220FP wide-creepage package is the result of a collaboration between ST and its customer, SoluM, a well-known Korean power supply manufacturer. SoluM is using this superior package to develop power solutions that are more robust and cost-effective than competing products.

St's TO-220FP wide-creepage power transistor is now ready for mass production, supporting the development of new products by one of the world's leading TV manufacturers. The new family includes four fully compliant 600V low-on-resistance RDS(ON)MDmesh™M2MOSFET transistors with current ratings from 8A to 34A. 1500 vstfh12n120k5mdmeshk5 vstfh12n150k5 and 1200 are expected to attend the relevant certification test before the third quarter of 2016.